A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• ]. Here, neon line irradiation of an Si(25 nm)/SiO2(6.5 nm)/Si(bulk) stack was used to induce collisional mixing of silicon atoms into the buried SiO2 layer. Upon subsequent thermal annealing, 1D chains of silicon nanocrystals of 2.2 nm diameter self-assembled in the center of the SiO2 layer. A TEM-based

Two-dimensional photonic crystals increasing vertical light emission from Si nanocrystal-rich thin layers

• Lukáš Ondič,
• Marian Varga,
• Ivan Pelant,
• Alexander Kromka,
• Karel Hruška and
• Robert G. Elliman

Beilstein J. Nanotechnol. 2018, 9, 2287–2296, doi:10.3762/bjnano.9.213

• spatial collection angle of 14°. Keywords: leaky modes; photoluminescence; photonic crystals; silicon nanocrystals; Introduction Photonic and plasmonic nanostructures can be employed to manipulate light on the nanoscale [1][2][3][4]. For example, photons emitted within a thin waveguiding layer can be

• sapphire by 40%. Thanks to recent progress in the understanding of light emission from silicon nanostructures, silicon nanocrystals (SiNCs) are envisaged as potential candidates for LEDs. SiNCs-based light-emitting devices with external quantum efficiencies up to 1.1% [19] and even up to 8.6% [20] have

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• substrates [19]. A previous work by Mastromatteo et al. [20] examining P implantation of silicon nanocrystals embedded into SiO2 attributed a similar P peak to interface effects. It is unclear as to whether the silicon to insulator interface in these SOI substrates will behave in a manner similar to that of

• the silicon nanocrystals. In order to attain a more detailed understanding of this interface peak a more comprehensive study of this back interface would have to be undertaken. Conclusion This study has demonstrated the first application of MLD to SOI substrates. Active carrier concentration levels

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• ), Kaiserslautern, Germany Department of Chemical Physics and Optics, Charles University, Prague, Czech Republic Integrated Materials Design Centre (IMDC), University of New South Wales (UNSW), Sydney, Australia 10.3762/bjnano.9.141 Abstract Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in

• of P- or B-atoms has severe implications for future applications of conventional impurity doping of Si in sub-10 nm technology nodes. Keywords: atom probe tomography; doping; photoluminescence; silicon nanocrystals; transient transmission; Introduction The conductivity type and free carrier

Changes of the absorption cross section of Si nanocrystals with temperature and distance

• Michael Greben,
• Petro Khoroshyy,
• Sebastian Gutsch,
• Daniel Hiller,
• Margit Zacharias and
• Jan Valenta

Beilstein J. Nanotechnol. 2017, 8, 2315–2323, doi:10.3762/bjnano.8.231

• of Sciences, Flemingovo namesti 2, 160 00 Prague 6, Czech Republic Faculty of Engineering, IMTEK, Albert-Ludwigs-University Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg, Germany 10.3762/bjnano.8.231 Abstract The absorption cross section (ACS) of silicon nanocrystals (Si NCs) in single-layer

• Si NCs cannot be considered as independent on experimental conditions and sample parameters. Keywords: absorption cross section; average lifetime; nanocrystal distance; photoluminescence decay; silicon nanocrystals; Introduction For decades, silicon – an abundant, nontoxic material with high

• silicon, which reveals all advantages of the quantum confinement effect [1], is a promising candidate for the development of a new generation of Si photovoltaic and photonic devices [2]. SiO2-embedded silicon nanocrystals (Si NCs) can be relatively easy integrated into current CMOS technology. In

Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

• Sebastian Gutsch,
• Daniel Hiller,
• Jan Laube,
• Margit Zacharias and
• Christian Kübel

Beilstein J. Nanotechnol. 2015, 6, 964–970, doi:10.3762/bjnano.6.99

• -von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany 10.3762/bjnano.6.99 Abstract We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared

• thickness and stoichiometry are below a critical value. Keywords: electron irradiation damage; energy-filtered transmission electron microscopy; membrane; plane view; silicon nanocrystals; size control; size distribution; Introduction Si nanocrystals (Si NC) are interesting for applications in third

Carrier multiplication in silicon nanocrystals: ab initio results

• Ivan Marri,
• Marco Govoni and
• Stefano Ossicini

Beilstein J. Nanotechnol. 2015, 6, 343–352, doi:10.3762/bjnano.6.33

• of carrier multiplication decay dynamics by analyzing systems of isolated and coupled silicon nanocrystals. The effects on carrier multiplication dynamics by energy and charge transfer processes are also discussed. Keywords: carrier multiplication; nanocrystals; silicon; solar cells; Introduction

• Trinh et al. [36] in order to explain results obtained in photoluminescence (PL) and induced absorption (IA) experiments conducted on dense arrays of silicon nanocrystals (Si-NCs, NC–NC separation ≤ 1 nm). In the first set of experiments, the authors proved that although the excitation cross-section is